High-current ion implanters

SHX-Ⅲ(HC)

A high-current implanter from a Japanese ion implanter maker. It combines beam scanning and mechanical scanning to keep productivity high at ultra-low energies.

Maker: Sumitomo Heavy Industries Ion Technology · Official product page

Specifications


CategoryHigh-current ion implanter
Beam typeCombination of beam scanning and mechanical scanning
Key featureHigh productivity at ultra-low energies
Energy range0.2 to 60 keV
Main applicationsHigh-dose, ultra-low-energy implantation

Specifications as published by the maker. See the sources below.

Overview


SHX-Ⅲ/HC is Sumitomo Heavy Industries Ion Technology's single-wafer high-current ion implanter. The implant energy is 0.2 to 60 keV, and the design emphasizes high productivity at ultra-low energies.

It was the first in the world to combine beam scanning with mechanical scanning, and it carries a newly developed electrostatic scanner for large beams and a parallelizing lens. An energy filter using electrostatic and magnetic fields at the final stage produces a high-purity beam free of energy contamination. It achieves a high 200 eV beam current for volume production that is as free of energy contamination as a drift beam.

Highly accurate implant uniformity across the wafer is corrected by the MIND system, and metal contamination is minimized. It handles 300 mm wafers and is used for next-generation processes at the 20 to 22 nm nodes and for producing leading-edge devices.

Key features


Applications


Also listed under: Beamline ion implanters

More from Sumitomo Heavy Industries Ion Technology


Sources


  1. Sumitomo Heavy Industries Ion Technology: SHX-Ⅲ/HC product page

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Last updated: October 23, 2026