S-UHE / SS-UHE Ⅱ
A series of high-energy ion implanters using multi-stage RF linac acceleration. SS-UHE Ⅱ is the higher-productivity model compared with S-UHE.
Maker: Sumitomo Heavy Industries Ion Technology · Official product page
Specifications
| Category | High-energy ion implanter |
|---|---|
| Acceleration method | Multi-stage RF linac |
| Series | S-UHE / SS-UHE Ⅱ / HE3 |
| Main applications | Deep implantation such as retrograde wells |
Specifications as published by the maker. See the sources below.
Overview
S-UHE/SS-UHE Ⅱ are Sumitomo Heavy Industries Ion Technology's single-wafer ultra-high-energy ion implanters. They use multi-stage RF linac acceleration, with implant energies from 85 keV (DC) to 6.8 MeV for S-UHE and up to 14.4 MeV for SS-UHE Ⅱ.
Symmetric ion beam parallelizing optics give high implant angle accuracy for good within-wafer uniformity and repeatability. They combine high quality with high productivity.
SS-UHE raises throughput with faster wafer scanning and improves energy accuracy, beam angle accuracy, metal contamination and pumping performance. The main applications are volume production of CCD and CMOS image sensors and triple-well formation in embedded devices.
Key features
- Multi-stage RF linac acceleration, single-wafer
- 6.8 MeV for S-UHE, up to 14.4 MeV for SS-UHE Ⅱ
- Within-wafer uniformity and repeatability from high implant angle accuracy
Applications
- Volume production of image sensors (CCD, CIS)
- Triple-well formation in embedded devices
Other high-energy ion implanters
More from Sumitomo Heavy Industries Ion Technology
Sources
High-energy ion implanters
Last updated: October 23, 2026