MC3-Ⅱ(MC)

Specifications

Specifications as published by the maker. See the sources below.

Overview

MC3-Ⅱ/MC is Sumitomo Heavy Industries Ion Technology's medium-current ion implanter. Its implant energy covers a wide range of 3 to 960 keV, and it handles 300 mm and 200 mm wafers.

It uses symmetric ion beam parallelizing optics and its own scanning method, with an energy filter and deceleration mechanism at the final stage. It supports implantation of heavy ions such as In and Sb, and offers fast automatic beam setup, higher beam current at low energies and more multiply charged beam current.

Energy contamination and metal contamination are minimized, and the MIND2.0 system achieves highly accurate implant uniformity across the wafer. Higher mechanical throughput also greatly raises productivity. It is used for scaling processes at the 16 to 14 nm nodes and for image sensors, with support for nodes of 10 nm and below planned.

Key features

• Implant energy of 3 to 960 keV
• Symmetric beam parallelizing optics, final-stage energy filter
• Supports heavy ions (In, Sb) and multiply charged beams
• Implant uniformity with MIND2.0

Applications

• Scaling processes at the 16 to 14 nm nodes
• Image sensors

Other medium-current ion implanters

• EXCEED3000AH · Nissin Ion Equipment
• IMX-3500 · ULVAC
• SOPHI · ULVAC

All medium-current ion implanters and Japanese suppliers

More from Sumitomo Heavy Industries Ion Technology

• S-UHE / SS-UHE Ⅱ · High-energy ion implanters
• SHX-Ⅲ(HC) · High-current ion implanters

Sources

1. Sumitomo Heavy Industries Ion Technology: MC3-Ⅱ/MC product page

More on this topic