SR-4000HT
An MOCVD system in Taiyo Nippon Sanso's SR series for research institutes and prototyping. The UR series serves volume production.
Maker: Taiyo Nippon Sanso · Official product page
Specifications
| Supported materials | Wide-bandgap materials such as AlN and AlGaN |
|---|---|
| Wafer size | 4 inch × 1 / 2 inch × 3 (SR4000) |
| Key feature | SR series for R&D (UR series for volume production) |
| Main applications | R&D of power electronics materials |
Specifications as published by the maker. See the sources below.
Overview
SR-4000HT is a GaN MOCVD system from Taiyo Nippon Sanso (Nippon Sanso Holdings group). Substrates are configured as 2 inch × 3 or 4 inch × 1, and it is used for R&D and prototyping.
The reactor is face-up, horizontal-flow and rotating, with gas supplied from 3-layer laminar flow nozzles (triple injection). A 2-zone heater heats up to 1,350 °C, allowing high InGaN growth temperatures and growth of AlGaN with high Al content. Growth pressure is 10 to 100 kPa, with 8 metalorganic lines and 2 hydride lines.
Its strengths are high growth rate, flexible control of background carbon concentration, and excellent temperature control and uniformity, and it is used for HEMTs, PN diodes, lasers and LEDs from RGB to UV. There is SR4000HT with 4 cabinets and SR4000HT-RR with 3.
Key features
- 2 inch × 3 / 4 inch × 1
- Up to 1,350 °C with a 2-zone heater
- Growth of high-Al AlGaN and high-temperature InGaN
- Face-up horizontal flow (triple injection)
Applications
- GaN HEMTs and PN diodes
- Lasers and RGB to UV LEDs
More from Taiyo Nippon Sanso
- Cylinder cabinets / BSGS / IGSS · Gas supply systems and bulk gas equipment
Sources
Front-end equipment: more products
Last updated: October 23, 2026