Front-end equipment
High-energy ion implanters
High-energy ion implanters accelerate dopant ions to energies of hundreds of keV to several MeV so that they reach deep into the wafer. They form deep wells and isolation in CMOS and image sensors and doped regions in power devices.
What it does
Linear accelerators or multiply charged ions are used to reach these energies.
Products (3)
- S-UHE / SS-UHE Ⅱ · Sumitomo Heavy Industries Ion Technology
A series of high-energy ion implanters using multi-stage RF linac acceleration. SS-UHE Ⅱ is the higher-productivity model compared with S-UHE.
- IH · ULVAC
A high-energy ion implanter for power and SiC devices that supports hot and room-temperature implantation. Up to 1,200 keV.
- SOPHI-400 · ULVAC
A high-energy ion implanter for power devices and IGBTs that reaches up to 1,200 keV.
Japanese makers in this category
- Sumitomo Heavy Industries Ion Technology · 1 product(s) listed
- ULVAC · 2 product(s) listed
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High-energy ion implanters
Last updated: October 23, 2026