IH
A high-energy ion implanter for power and SiC devices that supports hot and room-temperature implantation. Up to 1,200 keV.
Maker: ULVAC · Official product page
Specifications
| Energy | Up to 1,200 keV (3+ ions) |
|---|---|
| Substrate size | Up to Φ150 (IH-860PSIC), Φ200 (IH-1200PSIC) |
| Ion species | P, B, Ar, Al, N |
Specifications as published by the maker. See the sources below.
Overview
IH is ULVAC's high-energy ion implanter for power and SiC devices. It supports both hot and room-temperature implantation.
It switches instantly between hot and room temperature and can perform hot implantation automatically and continuously. It reaches 400 keV with 1+ ions, 800 keV with 2+ ions and 1,200 keV with 3+ ions. ULVAC's patented dual platen, which switches instantly between a heated stage and a cooled stage, and a preheat chamber that shortens heating time give high throughput.
Chain implantation is possible, reducing operator workload. The compact design covers everything from prototyping to volume production. IH-860PSIC handles Φ150 mm substrates and IH-1200PSIC handles Φ200 mm substrates.
Key features
- Instant switching between hot and room temperature
- Up to 1,200 keV
- Dual platen (patented)
Applications
- Ion implantation for SiC power devices
- MEMS
Other high-energy ion implanters
- S-UHE / SS-UHE Ⅱ · Sumitomo Heavy Industries Ion Technology
- SOPHI-400 · ULVAC
More from ULVAC
- CC-200 · PECVD equipment
- CCMT-D series · Vacuum gauges
- CME · PECVD equipment
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
Sources
High-energy ion implanters
Last updated: October 23, 2026