SOPHI-400
A high-energy ion implanter for power devices and IGBTs that reaches up to 1,200 keV.
Maker: ULVAC · Official product page
Specifications
| Energy | Up to 1,200 keV (400 kV acceleration with singly charged ions) |
|---|---|
| Substrate size | Φ125 to 200 mm |
| Ion species | P, H |
Specifications as published by the maker. See the sources below.
Overview
SOPHI-400 is ULVAC's high-energy ion implanter. ULVAC says it holds the top share for power devices and IGBTs, and it reaches up to 1,200 keV.
It can process ultra-thin wafers with direct transfer, and can also directly transfer warped substrates and align orientation flats precisely. It accelerates singly charged ions at 400 kV and implants with high precision using a parallel beam.
It is easy to maintain with low cost of ownership, and low-energy implantation from 5 kV is available as an option. It is used for thin substrate processes for power devices and others, IGBT processes, VCSELs, SOI/LNOI and MEMS.
Key features
- Up to 1,200 keV
- Direct transfer of ultra-thin and warped substrates
- Parallel beam
Applications
- High-energy implantation for IGBTs
Other high-energy ion implanters
- S-UHE / SS-UHE Ⅱ · Sumitomo Heavy Industries Ion Technology
- IH · ULVAC
More from ULVAC
- CC-200 · PECVD equipment
- CCMT-D series · Vacuum gauges
- CME · PECVD equipment
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
Sources
High-energy ion implanters
Last updated: October 23, 2026