Electron-beam direct write systems

JBX-8100FS

Name: JBX-8100FS
Brand: JEOL

JEOL's spot-beam electron beam lithography system that raises throughput while using less floor space and power than earlier models. It has 2 modes: high resolution and high throughput.

Maker: JEOL · Official product page

Specifications

Beam type	Spot beam
Acceleration voltage	Up to 100 kV (200 kV for G3)
Writing area	150 × 150 mm, maximum scan speed 125 MHz
Main applications	From ultra-fine fabrication to small and mid-scale production

Specifications as published by the maker. See the sources below.

Overview

JBX-8100FS is JEOL's spot-beam electron beam lithography system. Because it writes patterns directly with an electron beam, it can make nanometer-scale structures without masks. It writes with a spot beam, vector scanning and step-and-repeat.

The accelerating voltage is 100 kV on G1 and G2 models, and selectable from 200 kV, 130 kV, 100 kV and 50 kV on the G3 model. It supports fast writing with a maximum scan speed of 125 MHz and switching between high-resolution and high-speed modes, and overlay accuracy is ±9 nm or less for G1/G2 and ±8 nm or less for G3.

It handles wafers up to 200 mm, 6-inch masks and small samples of any shape. Its compact design measures 4.9 m wide × 3.7 m deep × 2.6 m high, and power consumption is kept low at about 3 kVA. It is used to make nanostructures, manufacture compound semiconductor devices and perform 3D processing of thick resists.

Key features

Spot beam, vector scan and step-and-repeat
Accelerating voltage of 100 kV (G3: 200/130/100/50 kV selectable)
Maximum scan speed of 125 MHz, overlay of ±8 to 9 nm or less
Compact design, power consumption about 3 kVA

Applications

Making nanostructures (R&D)
Manufacturing compound semiconductor devices
3D processing of thick resists

Other electron-beam direct write systems

ELS-BODEN series · ELIONIX

Sources

JEOL: JBX-8100FS product page