JBX-3200MVS
An electron beam lithography system for masks and reticles with a 50 kV variable shaped beam and a step-and-repeat stage.
Maker: JEOL · Official product page
Specifications
| Writing method | Variable shaped beam (50 kV) |
|---|---|
| Generation | 32 to 28 nm node |
| Key feature | 150 × 150 mm writing area, dose modulation, multi-pass writing |
| Main applications | Writing masks and reticles (including legacy products) |
Specifications as published by the maker. See the sources below.
Overview
JBX-3200MVS is JEOL's variable shaped beam (VSB) electron beam lithography system. It is used to manufacture photomasks and reticles and has been installed at captive and merchant mask shops in Japan and abroad.
The accelerating voltage is 50 kV, and it is based on a step-and-repeat stage, with dose modulation and multi-pass writing functions. The variable shaped beam supports a variety of patterning corrections, from legacy masks to leading-edge reticles.
It supports mask writing for the 32 nm to 28 nm nodes, with stitching accuracy of ±3.5 nm or less and overlay accuracy of ±5 nm or less. It is designed for high speed, high accuracy and high reliability.
Key features
- Variable shaped beam, 50 kV accelerating voltage
- Dose modulation and multi-pass writing
- Stitching accuracy of ±3.5 nm or less, overlay accuracy of ±5 nm or less
Applications
- Writing photomasks and reticles for the 32 to 28 nm nodes
- Manufacturing legacy masks
Other electron-beam mask writers
- MBM-3000 · NuFlare Technology
More from JEOL
- Cross Section Polisher™ IB-19530CP · Decapsulation and cross-sectioning equipment
- JAMP-9510F · Surface analysis instruments (XPS/SIMS)
- JBX-8100FS · Electron-beam direct write systems
- JSM-IT810 · Electron microscopes for observation (SEM/TEM)
Sources
Front-end equipment: more products
Last updated: October 23, 2026