LTA-2200EP/F
A lifetime measurement system using the μ-PCD method, which detects the decay of laser-injected carriers by microwave reflection.
Specifications
| Measurement method | μ-PCD (differential μ-PCD also measures epi on low-resistivity substrates) |
|---|---|
| Measurement targets | Si, SiC, GaN, LTPS and IGZO wafers |
| Key feature | Fast mapping at a standard pitch of 0.5 mm |
| Main applications | Evaluation of crystal perfection and heavy-metal contamination |
Specifications as published by the maker. See the sources below.
Overview
LTA-2200EP/F is Kobelco Research Institute's carrier lifetime measurement system. It uses the μ-PCD (microwave photoconductivity decay) method.
It detects, by microwave reflection, how carriers (electrons and holes) injected into the wafer by a laser decrease over time. The differential μ-PCD method can also measure epitaxial layers grown on low-resistivity substrates.
It handles Si, SiC and GaN wafers and LTPS and IGZO thin films, producing maps quickly at a standard pitch of 0.5 mm. It is used to evaluate crystal perfection and heavy-metal contamination.
Key features
- μ-PCD method (supports differential μ-PCD)
- Supports Si, SiC, GaN, LTPS and IGZO
- Fast mapping at a standard pitch of 0.5 mm
Applications
- Evaluation of crystal perfection
- Evaluation of heavy-metal contamination
More from Kobelco Research Institute
- SBW series flatness and shape measurement systems · Wafer substrate inspection equipment
Sources
Front-end equipment: more products
Last updated: October 23, 2026