IMX-3500
An ion implanter for R&D with a maximum energy of 200 kV that handles wafers up to 200 mm.
Maker: ULVAC · Official product page
Specifications
| Energy | 30 to 200 keV (3 to 200 keV optional) |
|---|---|
| Substrate size | Up to Φ150 (also supports Φ200 and irregular substrates) |
| Ion species | B, P, As, Si, Ge, Sb, In and others |
Specifications as published by the maker. See the sources below.
Overview
IMX-3500 is ULVAC's ion implanter. It has a maximum energy of 200 kV and handles wafer sizes up to Φ200 mm, making it suited to R&D at universities and similar institutions.
Besides gas sources for producing ions such as B, P and As, the ion source can use solid evaporation sources, which are safe and easy to handle. The HV terminal has the same configuration as production tools for high reliability.
The maximum wafer size is Φ200 mm, and it has a platen that also handles irregular substrates. It is used for R&D, small-volume production and MEMS.
Key features
- Up to 200 keV
- Also supports solid evaporation sources
- Platen for irregular substrates
Applications
- R&D and small-volume production
- MEMS
Other medium-current ion implanters
- EXCEED3000AH · Nissin Ion Equipment
- MC3-Ⅱ(MC) · Sumitomo Heavy Industries Ion Technology
- SOPHI · ULVAC
More from ULVAC
- CC-200 · PECVD equipment
- CCMT-D series · Vacuum gauges
- CME · PECVD equipment
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
Sources
Medium-current ion implanters
Last updated: October 23, 2026