Medium-current ion implanters
Medium-current ion implanters introduce dopants at moderate doses over a wide energy range with precise control of implant angle and energy. They are used for wells, threshold voltage adjustment and many other implants.
What it does
Some models also implant at high temperature for SiC power devices, where implant damage must be limited.
Products (4)
- EXCEED3000AH · Nissin Ion Equipment
The 300 mm wafer model of the EXCEED series, which developed as medium-current implanters with an energy filter. It raises beam current and transfer throughput.
- MC3-Ⅱ(MC) · Sumitomo Heavy Industries Ion Technology
Sumitomo Heavy Industries' medium-current ion implanter. Designed with an emphasis on ease of operation and reliability, it handles medium-dose implantation on volume production lines.
- IMX-3500 · ULVAC
An ion implanter for R&D with a maximum energy of 200 kV that handles wafers up to 200 mm.
- SOPHI · ULVAC
A medium-current ion implanter that ULVAC says holds the top share for power devices and IGBTs. It can directly transfer ultra-thin wafers.
Japanese makers in this category
- Nissin Ion Equipment · 1 product(s) listed
- Sumitomo Heavy Industries Ion Technology · 1 product(s) listed
- ULVAC · 2 product(s) listed
Other front-end equipment
Sources
Related calculators
- MOSFET threshold voltage (Vth) calculator
- Ion implantation profile calculator (Rp, peak concentration, junction depth)
- Sheet resistance and resistivity calculator (four-point probe, doping)
- MOSFET drain current (I–V characteristics) calculator
- Dopant diffusion (diffusion coefficient, junction depth) calculator
Japanese equipment by category
Medium-current ion implanters
Last updated: October 23, 2026