SOPHI
A medium-current ion implanter that ULVAC says holds the top share for power devices and IGBTs. It can directly transfer ultra-thin wafers.
Maker: ULVAC · Official product page
Specifications
| Energy | Up to 600 keV (SOPHI-200), 780 keV (SOPHI-260) |
|---|---|
| Substrate size | Φ100 to 200 mm |
| Maximum beam current | 2,500 eμA |
Specifications as published by the maker. See the sources below.
Overview
SOPHI is ULVAC's ion implanter for medium current. ULVAC says it holds the top share for power devices and IGBTs.
It can process ultra-thin wafers with direct transfer, and can also directly transfer warped substrates and align orientation flats precisely. It implants with high precision using a parallel beam, and with single ions SOPHI-200 accelerates up to 200 kV and SOPHI-260 up to 260 kV.
It is easy to maintain with low cost of ownership, and low-energy implantation from 5 kV is available as an option. It handles Φ125, 150 and 200 mm substrates and is used for thin substrate processes for power devices and others, SiC processes, VCSELs, SOI/LNOI and MEMS.
Key features
- Top share for power devices and IGBTs (per ULVAC)
- Direct transfer of ultra-thin and warped substrates
- High-precision implantation with a parallel beam
Applications
- Implantation for IGBTs and power devices
- SiC processes and VCSELs
Other medium-current ion implanters
- EXCEED3000AH · Nissin Ion Equipment
- MC3-Ⅱ(MC) · Sumitomo Heavy Industries Ion Technology
- IMX-3500 · ULVAC
More from ULVAC
- CC-200 · PECVD equipment
- CCMT-D series · Vacuum gauges
- CME · PECVD equipment
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
Sources
Medium-current ion implanters
Last updated: October 23, 2026