MASK CD-SEM E3660

Specifications

Specifications as published by the maker. See the sources below.

Overview

E3660 is Advantest's MASK CD-SEM for photomasks for nodes below 2 nm. In leading-edge lithography, more masks from multiple patterning and more sophisticated pattern shapes have sharply increased the number of measurement points. Multi-beam mask writers and similar tools now also allow curvilinear patterns, so measurements must take curvature into account.

Measurement accuracy is more than 20% better than the previous E3650. Simultaneous multi-point measurement from accurate, wide field-of-view SEM images and accurate contour extraction support lithography simulation. Focus control with a Z stage and in-situ ozone cleaning allow stable CD measurement over long periods without adjustment.

It supports DBM (Design Based Metrology), which automatically generates multi-point measurement recipes from rules based on design data, so hotspots and narrow patterns can be measured. It also has its own measurement algorithms for curvilinear patterns. It is used for EUV masks and nanoimprint master templates.

Key features

• Supports nodes below 2 nm
• More than 20% better measurement accuracy
• Wide field-of-view measurement and DBM
• Curvilinear pattern measurement

Applications

• Dimension measurement of EUV masks
• Measurement of NIL templates

Other mask dimension and flatness metrology

• MASK MVM-SEM® E3640 · Advantest
• MASK MVM-SEM® E3650 · Advantest
• MPM193 series · Lasertec
• MPM248 · Lasertec
• DR-8000 · SCREEN Holdings

All mask dimension and flatness metrology and Japanese suppliers

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• HA7200 · MEMS manufacturing equipment
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Sources

1. Advantest: E3660 product page

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