IMPHEAT-II
A high-temperature ion implanter for SiC power semiconductors. Compared with the previous IMPHEAT, beam current is about 4 times higher and production capacity about 3 times higher.
Specifications
| Type | High-temperature ion implantation (substrate temperature 500 °C) |
|---|---|
| Wafer size | SiC wafers |
| Energy | Maximum accelerating voltage 320 kV, up to 960 keV |
| Main applications | Dopant implantation for SiC power devices |
Specifications as published by the maker. See the sources below.
Overview
IMPHEAT-II is Nissin Ion Equipment's ion implanter for SiC power devices. Unlike silicon, SiC tends to keep crystal damage unless implanted at high temperature, so tools that implant while heating the wafer are used.
Implant temperature covers room temperature to 500 °C, and it handles 4, 6 and 8-inch wafers. It is a model with strengthened reliability and throughput of hot wafer transfer, and it claims the highest high-temperature throughput in the industry.
A high-current Al+ beam that contributes to productivity allows aluminum (Al) implantation for SiC power devices. Its highly reliable design is based on the company's EXCEED series of medium-current implanters, and shared maintenance parts improve operating efficiency.
Key features
- Hot implantation from room temperature to 500 °C
- 4, 6 and 8-inch wafers
- Highest high-temperature throughput in the industry (per Nissin)
- High-current Al+ beam
Applications
- p-type doping of SiC power devices (Al implantation)
Other sic power semiconductor equipment
- VERSALINE® ICP · Plasma-Therm Japan
- UNITY™ Me+ · Tokyo Electron (TEL)
More from Nissin Ion Equipment
- EXCEED3000AH · Medium-current ion implanters
Sources
Equipment by device type: more products
Last updated: October 23, 2026