Dry etching equipment

VERSALINE® ICP

An ICP etching system on Plasma-Therm's VERSALINE platform. It handles a wide range of materials from compound semiconductors to metals and piezoelectrics, from R&D to volume production.

Maker: Plasma-Therm Japan · Official product page

Specifications


Wafer size50 to 200 mm (expandable to 300 mm)
TypeICP (inductively coupled plasma) etching, heated 2 MHz ICP source
Chamber configurationSingle-wafer load lock (LL) / cassette cluster (CX)
TargetIII-V and II-VI compounds, Si-based materials, dielectrics, metals, piezoelectrics and others
Main applicationsPower devices, photonics, wireless, MEMS, advanced packaging

Specifications as published by the maker. See the sources below.

Overview


VERSALINE ICP is an ICP (inductively coupled plasma) etching system on Plasma-Therm's VERSALINE platform. Besides ICP etching, VERSALINE offers deep silicon etch (DSE), RIE, ion beam etch, PECVD and more on the same platform.

The ICP source runs at 2 MHz and is heated to improve process stability, suppress the first-wafer effect and extend the interval between cleanings. A key strength is the wide range of materials it handles: III-V compounds such as GaAs, InP and GaN, II-VI compounds, silicon-based materials, dielectrics, polymers, metals, metal oxides and nitrides, and piezoelectric materials.

It handles 50 to 200 mm wafers and can be expanded to 300 mm. There are single-wafer load lock (LL) and cassette cluster (CX) configurations, usable from R&D to volume production. Control is by Cortex, and endpoint detection by EndpointWorks, which uses optical emission or lasers.

Key features


Applications


Also listed under: SiC power semiconductor equipment, RF semiconductor (GaN/GaAs) equipment

Other dry etching equipment


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Sources


  1. Plasma-Therm: VERSALINE product page

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Last updated: October 23, 2026