UNITY™ Me+
A dry etching system for wafers of 200 mm and smaller. It is used for Si and SiC trench etching in power devices.
Specifications
| Wafer size | 100 / 150 / 200 mm |
|---|---|
| Chambers | SCCM (oxide), DRM, UD (Si/SiC trench); 1 to 4 chambers |
| Supported substrates | Si, SiC, glass, sapphire, LN, LT and others |
Specifications as published by the maker. See the sources below.
Overview
UNITY Me+ is a dry etching system from Tokyo Electron (TEL). It was renewed in 2021 as the successor to UNITY Me, which was well regarded for wafers of 200 mm and smaller.
The UNITY series offers high cost performance on 200 mm volume lines, and has recently drawn attention again for Si and SiC trench etching in power devices.
Besides DRM and SCCM chambers for SiO₂ and SiN etching, it can carry chambers for Si and SiC trench etching, and it supports 100, 150 and 200 mm wafers. Beyond silicon, it has a track record on a wide range of compound wafers such as SiC, LT and LN.
Key features
- Supports 100 to 200 mm wafers
- Chambers for Si and SiC trench etching
- Track record on compound wafers
Applications
- Trench etching for SiC power devices
- Oxide and nitride etching
Other sic power semiconductor equipment
- IMPHEAT-II · Nissin Ion Equipment
- VERSALINE® ICP · Plasma-Therm Japan
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Sources
Equipment by device type: more products
Last updated: October 23, 2026