Electron-beam mask writers

MBM-3000

A multi-beam mask writer for the 2 nm node. A next-generation blanking aperture array doubles the number of beams compared with the previous model.

Maker: NuFlare Technology · Official product page

Specifications


Writing methodMultiple electron beams
Generation2 nm node
Key feature12 nm beamlets, current density 3.6 A/cm²
Related modelsMBM-2000PLUS (previous model)
Main applicationsWriting advanced photomasks

Specifications as published by the maker. See the sources below.

Overview


MBM-3000 is NuFlare Technology's multi-beam mask writer. By writing patterns on photomasks with many electron beams at once, it raises productivity for advanced EUV masks, whose writing times tend to be long.

According to published presentation material, it carries 12 nm beamlets and a powerful cathode to achieve a beam current density of 3.6 A/cm², giving higher resolution and faster writing than the previous MBM-2000PLUS. The new optics use a next-generation blanking aperture array (BAA) that doubles the number of beams.

NuFlare's multi-beam writers also include MBM-2000PLUS and MBM-2000 for the 3 nm+ node, which control more than 260,000 electron beams quickly and accurately, and it also offers the EBM series of variable shaped beam writers, such as EBM-9500PLUS.

Key features


Applications


Other electron-beam mask writers


Sources


  1. NuFlare Technology: electron beam mask writers
  2. SPIE Photomask Technology (presentation on multi-beam writing)

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Last updated: October 23, 2026