GT2000
Hitachi High-Tech's CD-SEM for development and volume production of High-NA EUV generation devices. It offers ultra-low 100 V accelerating voltage and very fast multi-point measurement.
Maker: Hitachi High-Tech · Official product page
Specifications
| Measurement method | CD-SEM |
|---|---|
| Target generation | High-NA EUV generation |
| Key feature | Ultra-low 100 V accelerating voltage, backscattered electron detection for 3D structures |
| Main applications | Dimension measurement of advanced logic and memory |
Specifications as published by the maker. See the sources below.
Overview
GT2000 is Hitachi High-Tech's high-precision electron beam metrology system (CD-SEM). It was developed for development and volume production of High-NA EUV generation devices. A CD-SEM observes patterns with an electron beam and measures dimensions such as line width with sub-nanometer precision.
In High-NA EUV processes, resist becomes even thinner, and damage from the electron beam (shrinkage) becomes a problem. GT2000 offers ultra-low accelerating voltage conditions of 100 V and very fast multi-point measurement, increasing the number of measurement points while limiting the effect on the resist.
It has a high-sensitivity backscattered electron detection system for 3D device structures, and a new platform and electron optics minimize measurement differences between tools. In volume production, several tools must return the same values, so this tool-to-tool matching is a key performance measure for CD-SEMs.
Key features
- Ultra-low 100 V accelerating voltage for High-NA EUV processes
- Very fast multi-point measurement
- High-sensitivity backscattered electron detection for 3D structures
- New platform that minimizes tool-to-tool measurement differences
Applications
- Dimension measurement in development and volume production of High-NA EUV generation devices
- Measurement of 3D structures
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Sources
Last updated: October 23, 2026