T5801
A memory test system for next-generation ultra-high-speed DRAM such as GDDR7, LPDDR6 and DDR6. It supports 36 Gbps with PAM3.
Maker: Advantest · Official product page
Specifications
| Test speed | 36 Gbps with PAM3, 18 Gbps with NRZ |
|---|---|
| Target | GDDR7, LPDDR6, DDR6, MRDIMM, CAMM |
| Structure | Front-end unit (FEU) |
Specifications as published by the maker. See the sources below.
Overview
T5801 is Advantest's memory test system. With growing demand from AI, HPC and edge applications, memory is becoming ever more complex and fast, and T5801 is an advanced platform built for the latest test techniques for ultra-high-speed memory such as GDDR7, LPDDR6 and DDR6.
It supports up to 36 Gbps with PAM3, which represents signals with three voltage levels, and up to 18 Gbps with NRZ, which uses two levels. Its front-end unit (FEU) structure provides signal integrity among the best in the industry.
Functions needed to test next-generation DRAM (LPDDR6, GDDR7, DDR6) and memory module standards (MRDIMM, CAMM) are implemented in hardware. A flexible test cell supports everything from engineering to volume production.
Key features
- PAM3 at 36 Gbps and NRZ at 18 Gbps
- High signal integrity with the FEU structure
- Next-generation DRAM functions implemented in hardware
Applications
- Testing of GDDR7, LPDDR6 and DDR6
- Testing of MRDIMM and CAMM modules
Other memory test systems
More from Advantest
- 7038 System-Level Test System · Final test equipment
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- EVA100 · Analog test systems
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- HA1200 · Wafer probers
- HA7200 · MEMS manufacturing equipment
- HA7300 · MEMS manufacturing equipment
- M4173 · Test handlers
Sources
Last updated: October 23, 2026