PECVD equipment

CME

A tray-transfer PE-CVD system for volume production that deposits silicon-based insulating and barrier films.

Maker: ULVAC · Official product page

Specifications


Plasma27.12 MHz high-density plasma
Maximum substrate size200 mm square (CME-200E), 300 × 400 mm (CME-400E), 500 mm square (CME-500E)
CleaningNF₃ + Ar plasma

Specifications as published by the maker. See the sources below.

Overview


CME is ULVAC's PE-CVD system for volume production. It is suited to depositing silicon-based insulating and barrier films. With tray transfer, it handles a variety of substrates and offers excellent cost performance.

It supports high-density 27.12 MHz plasma processes and can deposit SiH₄-based SiO₂, SiNx, SiON and a-Si, and TEOS-based SiO₂ films. The chamber can be cleaned with NF₃ + Ar plasma.

Tray transfer allows deposition on substrates of many types and sizes. Maximum substrate size is 200 mm square for CME-200E, 300 × 400 mm for CME-400E and 500 mm square for CME-500E. It is used for power devices, LEDs, LDs and high-speed devices, OLEDs, solar cells and MEMS.

Key features


Applications


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More from ULVAC


Sources


  1. ULVAC: CME product page

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Last updated: October 23, 2026