CC-200
A compact PE-CVD system for everything from R&D to small-volume production. It supports high-density 27.12 MHz plasma.
Maker: ULVAC · Official product page
Specifications
| Plasma | 27.12 MHz high-density plasma |
|---|---|
| Film types | SiO₂, SiNx, SiON, a-Si (SiH₄-based), TEOS SiO₂ |
| Cleaning | CF₄ + O₂ plasma |
Specifications as published by the maker. See the sources below.
Overview
CC-200 is ULVAC's compact, easy-to-use PE-CVD system. It covers everything from R&D to small-volume production.
It supports high-density 27.12 MHz plasma processes and can deposit SiH₄-based SiO₂, SiNx, SiON and a-Si, and TEOS-based SiO₂ films. The chamber can be cleaned with CF₄ + O₂ plasma.
It can also take heaters for low-temperature deposition for OLEDs, and tray transfer handles many substrate sizes. It is used for power devices, compound devices such as LEDs, LDs and high-speed devices, OLED development, solar cell development and MEMS.
Key features
- High-density 27.12 MHz plasma
- SiH₄-based and TEOS-based films
- Tray transfer for many substrates
Applications
- Insulating films for power and compound devices
- MEMS
Other pecvd equipment
- CME · ULVAC
- uGmni-200C · ULVAC
More from ULVAC
- CCMT-D series · Vacuum gauges
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
- ENTRON-EXX · PVD equipment
- H83 / H84 · Diffusion furnaces
Sources
PECVD equipment
Last updated: October 23, 2026