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CME-200E

ULVAC's tray-transfer PE-CVD for volume production of silicon-based insulating and barrier films. It uses high-density 27.12 MHz plasma.

Maker: ULVAC · Official product page

Specifications

Supported substrates200 mm square (CME-400E: 300 × 400 mm, CME-500E: 500 mm square)
TypePE-CVD (27.12 MHz high-density plasma, tray transfer)
Target filmsSiO₂, SiNx, SiON, a-Si, TEOS-SiO₂
Main applicationsPower devices, LEDs, LDs, MEMS

Specifications as published by the maker. See the sources below.

Overview

CME-200E is the 200 mm square substrate model of ULVAC's CME series of production PE-CVD (plasma CVD) systems. It is designed for volume production of silicon-based insulating and barrier films, and tray transfer lets it handle a variety of substrates with excellent cost performance.

It supports high-density 27.12 MHz plasma processes and can deposit SiH₄-based SiO₂, SiNx, SiON and a-Si, and TEOS-based SiO₂. The chamber can be cleaned with NF₃ + Ar plasma.

The series also includes CME-400E for 300 × 400 mm and CME-500E for 500 mm square substrates. Applications are volume production lines for compound semiconductors and electronic devices, including power devices, LEDs, LDs and high-speed devices, OLEDs, solar cells and MEMS.

Key features

Applications

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More from ULVAC

Sources

  1. ULVAC: CME series product page

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Last updated: October 23, 2026