GALOIS211
A GaN wafer defect inspection and review system that quickly detects various defects on GaN wafers and observes them at high resolution.
Maker: Lasertec · Official product page
Specifications
| Type | Confocal optics, differential interference optics, wavelength selection |
|---|---|
| Wafer size | Up to Φ8 inch |
| Inspection time | 6 minutes per wafer (Φ6 inch, 10x lens) |
Specifications as published by the maker. See the sources below.
Overview
GALOIS211 is Lasertec's GaN wafer defect inspection and review system. The GALOIS series was announced in December 2017. It quickly detects various defects on GaN wafers and allows high-resolution observation.
Confocal optics, well suited to inspecting transparent substrates, give stable inspection unaffected by reflections from the back side. Differential interference optics sensitively detect shallow scratches and various crystal defects. Because the wavelength can be selected with the light source and optical filters, even heteroepitaxial structures such as GaN on SiC can be inspected under optimal conditions without film interference effects.
The latest image processing inspects without being affected by GaN surface morphology, and a 6-inch wafer is inspected in 6 minutes. It is used for defect inspection of bulk GaN and homoepitaxial and heteroepitaxial GaN wafers, and for process control of epitaxial growth and polishing.
Key features
- Confocal + differential interference optics
- Wavelength selection avoids film interference
- Inspects a 6-inch wafer in 6 minutes
Applications
- Defect inspection of GaN wafers and epitaxial layers
Other crystal defect inspection equipment
All crystal defect inspection equipment and Japanese suppliers
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- BGM300 · TSV formation equipment
- BIM300 · Surface profilers
Sources
Crystal defect inspection equipment
Last updated: October 23, 2026