PECVD equipment

uGmni-200C

A system that mounts a PE-CVD module on the standard uGmni core. It deposits high-quality films with fewer particles than tray-type tools.

Maker: ULVAC · Official product page

Specifications


Plasma27.12 MHz high-density plasma
Film typesSiO₂, SiNx, SiON, a-Si, TEOS SiO₂
Substrate sizeUp to Φ200 mm

Specifications as published by the maker. See the sources below.

Overview


uGmni-200C is ULVAC's system that mounts a PE-CVD module on the standard uGmni core. Compared with tray-type tools, it deposits high-quality films with fewer particles.

It supports high-density 27.12 MHz plasma processes and can deposit SiH₄-based SiO₂, SiNx, SiON and a-Si, and TEOS-based SiO₂ films. The chamber can be cleaned with NF₃ + Ar plasma, and it handles substrates up to Φ200 mm.

Sputtering, etching and ashing modules can also be combined on the uGmni core, and it is used to deposit insulating films for power devices, MEMS sensors, optical devices such as VCSELs, high-density packaging and communication devices.

Key features


Applications


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More from ULVAC


Sources


  1. ULVAC: uGmni-200C product page

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Last updated: October 23, 2026