CVD equipment
CVD (chemical vapor deposition) equipment forms thin films by letting precursor gases react on or near a heated wafer surface. Depending on the film and the device, it runs at low pressure, uses plasma to lower the process temperature, or is built as single-wafer or batch systems.
What it does
CVD is used for insulating films such as SiO₂ and SiN, and for metal and barrier films such as tungsten, titanium and TiN that fill contacts and vias. Sequential and cyclic variants bridge the gap between CVD throughput and ALD step coverage.
Products (7)
- QUIXACE®-II · Kokusai Electric
KOKUSAI ELECTRIC's 300 mm large-batch thermal process system. Core technologies in temperature control, transfer, vacuum and gas replacement, and cooling shorten cycle time.
- Episode™ 1 · Tokyo Electron (TEL)
TEL's 300 mm single-wafer deposition platform that carries up to 8 process modules. It is used to lower contact resistance in advanced logic.
- Episode™ 2 DMR · Tokyo Electron (TEL)
TEL's single-wafer deposition platform that transfers and processes 2 wafers at the same time. It is used for TiN deposition in memory.
- Triase+™ EX-II™ TiN · Tokyo Electron (TEL)
TEL's high-throughput single-wafer ASFD system that deposits TiN with high step coverage using TiCl₄.
- Triase+™ Ti/TiN · Tokyo Electron (TEL)
TEL's single-wafer Ti/TiN CVD system using TiCl₄. It lowers contact resistance while reducing junction leakage.
- Triase+™ W · Tokyo Electron (TEL)
The tungsten CVD configuration of Triase+, Tokyo Electron's single-wafer deposition system for 300 mm wafers. It combines an SFD nucleation layer with bulk deposition to fill features with high step coverage.
- CME-200E · ULVAC
ULVAC's tray-transfer PE-CVD for volume production of silicon-based insulating and barrier films. It uses high-density 27.12 MHz plasma.
Japanese makers in this category
- Kokusai Electric · 1 product(s) listed
- Tokyo Electron (TEL) · 5 product(s) listed
- ULVAC · 1 product(s) listed
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Sources
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Last updated: October 23, 2026