Failure analysis equipment

NanoProber® NP8000

A nano-device characterization system that lands probes tens of nanometers wide on devices under SEM observation to measure transistor electrical characteristics. It is designed for the 5 nm node and beyond.

Maker: Hitachi High-Tech · Official product page

Specifications


Analysis techniqueNanoprobing (electrical characteristics, EBAC, EBIC, pulsed IV)
TargetTransistors and wiring (5 nm node and beyond)
Key featureHigh-resolution observation at low accelerating voltage with a Schottky electron gun and deceleration
Main applicationsElectrical identification of defective transistors

Specifications as published by the maker. See the sources below.

Overview


NP8000 is Hitachi High-Tech's SEM-based nanoprobing system. Designed for analysis at the 5 nm node and beyond, it can evaluate the electrical characteristics of nanoscale devices, EBAC, EBIC, pulsed IV and temperature dependence.

New electron optics and a new Schottky electron gun give clear images even at ultra-low accelerating voltages below 100 V, reducing sample damage during observation. It has 8 probes, and higher probe current improves the quality of EBAC (electron beam absorbed current) images. DI-EBAC, which visualizes defects by applying voltage, has also been strengthened, making low-resistance defects that were previously hard to find easier to locate.

A temperature-controlled stage allows temperature-dependent characterization, and optical cameras that view the top and side at once assist coarse probing. It also has a sub-stage that moves the sample independently of the probes and a load lock chamber for probe exchange, and supports pulsed IV measurement (custom order) to diagnose resistive gate electrode failures.

Key features


Applications


Other failure analysis equipment


More from Hitachi High-Tech


Sources


  1. Hitachi High-Tech: NP8000 product page

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Last updated: October 23, 2026