NT333™
Tokyo Electron's semi-batch deposition system that separates the precursor adsorption and reaction spaces with a gas curtain, completing one ALD cycle per table rotation.
Specifications
| Wafer size | 300 mm (6 wafers per chamber, 12 wafers with 2 chambers) |
|---|---|
| Type | Semi-batch ALD (thermal / plasma) |
| Target films | SiO₂, SiN, high-k oxides |
| Key feature | High step coverage, low-temperature treatment step, stress control |
Specifications as published by the maker. See the sources below.
Overview
NT333 is a semi-batch deposition system for 300 mm wafers from Tokyo Electron. Its unique mechanism uses a separating gas to divide the space where precursor gas adsorbs from the space where it reacts, so one ALD cycle is completed with each rotation of the table carrying the wafers.
Each chamber processes 6 wafers, and the system processes 12 wafers at once in 2 chambers. Reactors are available in thermal and plasma versions, and thermal ALD oxide has been run at up to 760 °C. Target films are SiO₂, SiN and high-k oxides on Si and SOI substrates.
Its strengths are high step coverage, high-quality films from a low-temperature treatment step, high throughput, film stress control, reduced plasma damage and atomic-level thickness control. It sits between single-wafer and batch systems.
Key features
- Unique mechanism separating adsorption and reaction spaces with a gas curtain (one cycle per rotation)
- 6 wafers per chamber × 2 chambers = 12 wafers processed at once
- Thermal and plasma reactors
- Low-temperature treatment step, stress control and high step coverage
Applications
- ALD of SiO₂, SiN and high-k oxides
- Advanced devices on Si and SOI substrates
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Sources
Last updated: October 23, 2026