DUV lithography systems

NSR-S636E

Nikon's ArF immersion scanner for critical layers that combines overlay accuracy and throughput at a high level.

Maker: Nikon · Official product page

Specifications


Light source and NAArF immersion (193 nm), 1.35
Resolution38 nm or less
Overlay accuracyMMO 2.1 nm or less
Throughput280 wafers per hour or more (96 shots)

Specifications as published by the maker. See the sources below.

Overview


NSR-S636E is Nikon's ArF immersion scanner for critical layers. It combines overlay accuracy and throughput at a high level, achieving the highest productivity among Nikon's semiconductor lithography systems.

The inline Alignment Station (iAS), carried over from earlier models, has been further improved to measure and correct wafer warpage and distortion more accurately while keeping throughput high. iAS builds an alignment station inline inside the exposure tool, allowing multi-point alignment on every shot without lowering throughput.

Less downtime also improves overall productivity. Resolution is 38 nm or less, NA 1.35, reduction ratio 1:4 and maximum exposure field 26 × 33 mm; same-model overlay accuracy (MMO) is 2.1 nm or less, and throughput is 280 wafers per hour or more (96 shots).

Key features


Applications


Other duv lithography systems


All duv lithography systems and Japanese suppliers

More from Nikon


Sources


  1. Nikon: NSR-S636E product page

More on this topic


DUV lithography systems

Last updated: October 23, 2026