SEGul-200
A system that grows GaN epitaxially by sputtering with ULVAC's own RaSE method. It needs no abatement equipment for special gases.
Maker: ULVAC · Official product page
Specifications
| Type | RaSE (Radical assist Sputter Epitaxy) |
|---|---|
| Process temperature | 600 to 800 °C (gases: Ar, N₂) |
| Uniformity | Thickness and resistance ±10% (Φ200 mm area) |
Specifications as published by the maker. See the sources below.
Overview
SEGul-200 is a sputtering system from ULVAC. Its in-house RaSE (Radical assist Sputter Epitaxy) method achieves epitaxial growth of GaN used in power, optical and RF devices.
This technology addresses challenges in GaN device manufacturing such as freedom of device design, cost and environmental impact. Because it uses sputtering, no abatement equipment for special gases is needed.
Process temperature is 600 to 800 °C, and the gases used are Ar and N₂. It can also grow n-type GaN by doping. Thickness and resistance uniformity is ±10% over a Φ200 mm area. Up to 3 process chambers can be installed, covering development through volume production, and it handles Φ50 to 200 mm substrates.
Key features
- GaN epitaxy by the RaSE method
- No abatement equipment for special gases
- Growth of n-type GaN
Applications
- GaN power and communication devices
- μLED
More from ULVAC
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- CCMT-D series · Vacuum gauges
- CME · PECVD equipment
- CME-200E · CVD equipment
- CS · Sputtering equipment
- ei-5 · Vacuum evaporation equipment
- ei-5 / EVD-600LP · Vacuum evaporation equipment
- ENTRON-EX W300 · PVD equipment
Sources
Equipment by device type: more products
Last updated: October 23, 2026