Dry etching equipment

uGmni-200E

A cost-conscious dry etching system that scales from one chamber to multiple chambers.

Maker: ULVAC · Official product page

Specifications


TypeMagnetically assisted ICP (ISM; ISM-duo optional)
ConfigurationSingle to multiple chambers; ashing chambers can be added
Main applicationsCompound and power devices, metal wiring, ferroelectrics, magnetic materials

Specifications as published by the maker. See the sources below.

Overview


uGmni-200E is ULVAC's dry etching system. It scales from one chamber to multiple chambers, with extensibility focused on cost performance.

A star electrode that prevents deposits on the RF window and a heating function improve repeatability and stability. The optional ISM-duo controls uniformity through the RF distribution ratio between antennas split into inner and outer sections. Process chambers that allow twice the gas flow of ULVAC's standard, and chambers with high-temperature heating, can also be chosen.

Etching and ashing chambers can be added, and in the ashing chamber, microwave water plasma treatment that prevents corrosion after metal etching can also be chosen. It is used for compound devices such as LEDs, LDs, VCSELs and RF devices, power devices such as IGBT wiring and SiC processing, metal wiring, gate electrodes, and processing of ferroelectrics, noble metals and magnetic materials.

Key features


Applications


Other dry etching equipment


All dry etching equipment and Japanese suppliers

More from ULVAC


Sources


  1. ULVAC: uGmni-200E product page

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Dry etching equipment

Last updated: October 23, 2026