Triase+™ Ti/TiN
TEL's single-wafer Ti/TiN CVD system using TiCl₄. It lowers contact resistance while reducing junction leakage.
Specifications
| Type | Single-wafer CVD (SFD TiN and HP Ti also available) |
|---|---|
| Film types | Ti, TiN |
| Main applications | Contact process |
Specifications as published by the maker. See the sources below.
Overview
Triase+ Ti/TiN is a single-wafer CVD system for 300 mm wafers from Tokyo Electron (TEL). It uses TiCl₄ to deposit Ti and TiN with high step coverage. It has a strong track record and reliability in volume fabs worldwide, and in the contact process of many device types it lowers resistance while reducing junction leakage.
For finer, higher aspect ratio steps, Triase+ SFD TiN uses SFD, which combines the high step coverage of ALD with the high productivity of CVD.
Triase+ HP Ti, for next-generation devices with shallow junctions and nickel silicide layers, widens the process temperature range and improves particle performance and productivity through showerhead surface treatment and simultaneous TiSi formation during Ti deposition. HP Ti Plus offers even higher step coverage. Each product can carry up to 4 chambers.
Key features
- High-coverage Ti and TiN from TiCl₄
- SFD TiN and HP Ti in the lineup
- Up to 4 chambers
Applications
- Ti and TiN deposition for contacts
Other cvd equipment
- QUIXACE®-II · Kokusai Electric
- Episode™ 1 · Tokyo Electron (TEL)
- Episode™ 2 DMR · Tokyo Electron (TEL)
- Triase+™ EX-II™ TiN · Tokyo Electron (TEL)
- Triase+™ W · Tokyo Electron (TEL)
- CME-200E · ULVAC
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- CELLESTA™ Pro SPM · Wet resist strip equipment
- CELLESTA™ SCD · Wafer dryers
Sources
Last updated: October 23, 2026