Triase+™ EX-II™ TiN
TEL's high-throughput single-wafer ASFD system that deposits TiN with high step coverage using TiCl₄.
Specifications
| Type | Single-wafer ASFD (Advanced Sequential Flow Deposition) |
|---|---|
| Film types | TiN (Plus HT and TiON also available) |
| Main applications | Contact barriers, capacitor electrodes, word line barriers and metal gates |
Specifications as published by the maker. See the sources below.
Overview
Triase+ EX-II TiN is a high-throughput single-wafer ASFD (Advanced Sequential Flow Deposition) system for 300 mm wafers from Tokyo Electron (TEL). It uses TiCl₄ to deposit titanium nitride (TiN) with high step coverage.
As devices shrink and move to 3D structures, depositing films on high aspect ratio features becomes harder. TiN Plus has a redesigned chamber reaction space and gas delivery, greatly improving within-wafer uniformity, step coverage and productivity. The lineup also includes Plus HT, a high-temperature version for low-resistance, high-purity TiN, and TiON, which reduces leakage current in MIM capacitor electrodes.
It covers contact barriers, capacitor electrodes, word line barriers and metal gates. Each configuration can carry up to 4 process chambers, and cleaning technology optimized for each chamber gives high productivity and a low CoC (cost of consumables).
Key features
- High-coverage TiN from TiCl₄
- ASFD method
- Up to 4 chambers
- Plus HT and TiON also available
Applications
- Contact barriers
- DRAM capacitor electrodes and word lines
- Metal gates
Other cvd equipment
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- Episode™ 1 · Tokyo Electron (TEL)
- Episode™ 2 DMR · Tokyo Electron (TEL)
- Triase+™ Ti/TiN · Tokyo Electron (TEL)
- Triase+™ W · Tokyo Electron (TEL)
- CME-200E · ULVAC
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Sources
Last updated: October 23, 2026